Leakage currents induced in ultrathin oxides on (100)Si by deep-UV photons

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 71, Issue 1-3, 2000, Pages 56-61

  Afanas'ev, V V ^a   Stesmans, A ^a  

^a KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL DEFECTS; HYDROGEN; IONIZATION OF GASES; LEAKAGE CURRENTS; OXIDES; PHOTOLITHOGRAPHY; PHOTONS; RADIATION DAMAGE; ULTRAVIOLET RADIATION; VACUUM APPLICATIONS;

DEEP-ULTRAVIOLET LITHOGRAPHY;

SILICON WAFERS;

EID: 0033874546     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00349-9     Document Type: Article

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