Fabrication of mechanical structures in p-type silicon using electrochemical etching

Sensors and Actuators, A: Physical

Volumn 82, Issue 1, 2000, Pages 254-258

  Ohji, H ^a   French, P J ^b   Tsutsumi, K ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; ETCHING; MORPHOLOGY; SILICA; SINGLE CRYSTALS;

ELECTROCHEMICAL ETCHING;

SEMICONDUCTING SILICON;

EID: 0033751489     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00341-6     Document Type: Article

References (9)

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3. H. Ohji, P.T.J. Gennissen, P.J. French, K. Tsutsumi, Fabrication of accelerometer using single-step electrochemical etching for micro structures (SEEMS), IEEE MEMS Conference '99, Orlando, USA, 1999, pp. 61-65.
4. Steiner P., Richter A., Lang W. Using porous silicon as a sacrificial layer. J. Micromech. Microeng. 3:1993;32-36.
5. Propst E.K., Kohl P.A. The electrochemical oxidation of silicon and formation of porous silicon in Acetonitrile. J. Electrochem. Soc. 141:1994;1006-1013.
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8. Ohji H., French P.J. Single step electrochemical etching in ammonium fluoride. Sens. Actuators, A. 74:1999;109-112.
9. H. Ohji, S. Lahteenmaki, P.J. French, Macro porous silicon formation for micromachining, Proceedings SPIE, Micromachining and Microfabrication Process Technology III, Austin, TX, USA, September 1997, pp. 189-197.