Optimum Doping Profile for Minimum Ohmic Resistance and High-Breakdown Voltage

IEEE Transactions on Electron Devices

Volumn 26, Issue 3, 1979, Pages 243-244

  Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 62749110128     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1979.19416     Document Type: Article

References (11)

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7. Y. C. Kao and E. D. Wolley, Proc. IEEE, vol. 55, p. 1409, 1967.
8. R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits. New York: Wiley, 1977, p. 136.
9. M. S. Sze and G. Gibbons, “Avalanche breakdown voltage of abrupt and linearly graded p-n junctions in Ge, Si, GaAs, and GaP,” Appl. Phys. Lett., vol. 8, p. 111, 1966.
10. Y. C. Kao, “The design of high voltage, high power silicon junction rectifiers,” IEEE Trans. Electron Devices, vol. ED. 7, pp. 657–660, 1970.
11. I. S. Sokolnikoff and R, M. Redheffer, Mathematicas of Physics and Modern Engineering. New York: MacGraw-Hill, 1966, p. 351