Analytical solutions for the breakdown voltage of abrupt cylindrical and spherical junctions

Solid State Electronics

Volumn 19, Issue 9, 1976, Pages 739-744

  Jayant Baliga, B ^a   Ghandhi, Sorab K ^b  

^a GE GLOBAL RESEARCH   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - ELECTRIC BREAKDOWN;

SEMICONDUCTOR DEVICES;

EID: 0017002983     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(76)90152-0     Document Type: Article

References (13)

1. Experimental study of avalanche breakdown in silicon planar p-n junctions
2. Avalanche Breakdown Calculations for a Planar p-n Junction