Optimum Doping Profile of Power MOSFET Epitaxial Layer

IEEE Transactions on Electron Devices

Volumn 29, Issue 6, 1982, Pages 985-987

  Chen, Xing Bi ^a,b   Hu, Chenming ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0020141215     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1982.20818     Document Type: Article

References (7)

1. C. Hu, “Optimum doping profile for minimum ohmic resistance and high-breakdown voltage,” IEEE Trans. Electron Devices, vol. ED-26, p. 243, Mar. 1979.
2. W. A. Lane and C. A. Salama, “Epitaxial VVMOS power transistors,” IEEE Trans. Electron Devices, vol. ED-27, p. 349, Feb. 1980.
3. V. A. Temple, R. P. Love, and P. V. Gray, “A 600 Volt MOSFET designed for low on-resistance,” IEEE Trans. Electron Devices, vol. ED-27, p. 343, Feb. 1980.
4. S. C. Sun and J. D. Plummer, “Modeling of the on-resistance of LDMOS, VDMOS, and VMOS power transistors,” IEEE Trans. Electron Devices, vol. ED-27, p. 356, Feb. 1980.
5. R. F. David, in Proc. Electronic Components Conf., p. 324, 1977.
6. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1969.
7. R. W. Dutton et al., “Oxidation and Epitaxy,” Stanford Electronics Laboratory, Palo Alto, CA, Tech. Rep. 5021–1, May 1977.