Raman spectroscopic investigation of the stress state in silicon substrates near edges of Pt/PZT microstructures

Crystal Research and Technology

Volumn 35, Issue 4, 2000, Pages 449-460

  Krawietz, R ^a   Pompe, W ^a   Sergo, V ^b  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CRYSTAL MICROSTRUCTURE; ELECTRODES; FINITE ELEMENT METHOD; LEAD COMPOUNDS; PLATINUM; RAMAN SPECTROSCOPY; SENSORS; STRESS ANALYSIS; STRESS CONCENTRATION;

LEAD ZIRCONATE TITANATE;

SILICON;

EID: 0033745970     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200004)35:4<449::AID-CRAT449>3.0.CO;2-Q     Document Type: Article

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