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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 3 A, 2000, Pages 1371-1377

Mechanism of nitrogen incorporation into amorphous-CNx films formed by plasma-enhanced chemical-vapor deposition of the doublet and quartet states of the CN radical

(6) Ito, Haruhiko a Ito, Noriko a Takahashi, Tsutomu a Takamatsu, Hirosuke a Tanaka, Daisuke a Saitoh, Hidetoshi a

a NAGAOKA UNIVERSITY OF TECHNOLOGY (Japan)

Author keywords

Amorphous CNx films; Chemical vapor deposition; CN; Electronic states; Mechanism of film formation; Microwave plasma; Optical emission spectroscopy; Rf plasma

Indexed keywords

CHEMICAL BONDS; CYANIDES; DISSOCIATION; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; FREE RADICALS; MOLECULAR STRUCTURE; NITROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

DOUBLET STATE; MICROWAVE PLASMA; QUARTET STATE;

AMORPHOUS FILMS;

EID: 0033742983 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.1371 Document Type: Article

Times cited : (40)

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