Impact of nitrogen implant prior to the gate oxide growth on transient enhanced diffusion

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 695-698

  Kamgar, Avid ^a   Vuong, H H ^a   Liu, C T ^a   Rafferty, C S ^a   Clemens, J T ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

REVERSE SHORT CHANNEL EFFECT (RSCE); TRANSIENT ENHANCED DIFFUSION (TED);

COMPUTER SIMULATION; DIFFUSION IN SOLIDS; INTERFACES (MATERIALS); INTERFACIAL ENERGY; ION IMPLANTATION; NITROGEN; REDUCTION; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

MOSFET DEVICES;

EID: 84886448052     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)