50% high efficiency 1 W power heterojunction FET for 3.5 V CDMA cellular phones

Asia-Pacific Microwave Conference Proceedings, APMC

Volumn 3, Issue , 1997, Pages 1105-1108

  Yamaguchi, Keiko ^a   Iwata, Naotaka ^a   Tomita, Masatoshi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SPREAD SPECTRUM COMMUNICATION;

CODE DIVISION MULTIPLE ACCESS (CDMA) SYSTEMS; HETEROJUNCTION FIELD EFFECT TRANSISTORS (HJFET);

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0031346832     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)