High efficiency FET power amplifier with very low drain bias for mobile communication

Volumn , Issue , 1995, Pages 123-126

  Huang, Jiadong ^a   Zhan, Ding ^a  

^a Marine Electronic Instrument Institute   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE;

DRAIN BIAS VOLTAGE;

MOBILE TELECOMMUNICATION SYSTEMS;

EID: 0029237083     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)