High efficiency, low adjacent channel leakage 2-V operation GaAs power MESFET amplifier for 1.9-GHz digital cordless phone system

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1997, Pages 1323-1326

  Nagaoka, M ^a   Wakimoto, H ^a   Kawakyu, K ^a   Nishihori, K ^a   Kitaura, Y ^a   Sasaki, T ^a   Kameyama, A ^a   Uchitomi, N ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MESFET DEVICES; MOBILE TELEPHONE EXCHANGES; PERSONAL COMMUNICATION SYSTEMS; PHASE SHIFT KEYING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

DIGITAL CORDLESS PHONE SYSTEM; PERSONAL HANDY PHONE SYSTEM (PHS); POWER ADDED EFFICIENCY (PAE);

POWER AMPLIFIERS;

EID: 0030699903     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)