Robust GaAs MMIC amplifiers using planar ion-implanted power MESFETs with improved open-channel burnout

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1995, Pages 449-451

  Miller, D C ^a   Sadler, R A ^a   Peake, A H ^a  

^a ITT   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; GATES (TRANSISTOR); ION IMPLANTATION; MESFET DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TRANSIENTS;

DRAIN BIASES; GATE SOURCE BIASES; OPEN CHANNEL BURNOUT VOLTAGE; PULSED ON WAFER TESTING;

MICROWAVE AMPLIFIERS;

EID: 0029209962     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)