(110) HREM of interfacial structures in semiconductor hetero-structures

Microscopy Research and Technique

Volumn 40, Issue 3, 1998, Pages 187-205

  Ikarashi, Nobuyuki ^a   Ishida, Koichi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Chemically ordered interface; Epitaxial growth mechanism; GaAs AlAs; Interfacial steps; Si Ge

Indexed keywords

ALUMINUM ARSENIDE; ATOMS; CRYSTAL ATOMIC STRUCTURE; EPITAXIAL GROWTH; GALLIUM ARSENIDE; III-V SEMICONDUCTORS;

CHEMICALLY ORDERED INTERFACE; EPITAXIAL GROWTH MECHANISM; GAAS/ALAS; GROWTH MECHANISMS; HETERO-INTERFACES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACIAL STEP; INTERFACIAL STRUCTURES; SI/GE; STRONG CONTRAST;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM; SILICON;

ARTICLE; CRYSTAL STRUCTURE; IMAGING; PRIORITY JOURNAL; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0032005384     PISSN: 1059910X     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1097-0029(19980201)40:3<187::AID-JEMT3>3.0.CO;2-S     Document Type: Article

References (36)

1. Bourret, A., Renault, A., and Anstis, G.R. (1978/79) Dislocation core imaging in metals and semiconductors. Chem. Scr., 14:207-212.
2. Chew, N.G., and Cullis, A.G. (1987) The preparation of transmission electron microscopy specimens from compound semiconductors by ion milling. Ultramicroscopy, 23:175-198.
3. Cowley, J.M., and Moodie, A.F. (1957) The scattering of electrons by atoms and crystals, I. A new theoretical approach. Acta Crystallogr., 10:609-619.
4. De Jong, A.F., Bender, H., and Cone, W. (1987) Actual composition of experimental and simulated lattice images of the GaAs/AlAs interface. Ultramicroscopy 21, 373-378.
5. Desseaux, J., Renault, A., and Bourret, A. (1977) Multi-beam lattice images from germanium oriented in (011). Philos. Mag. 35:357-372.
6. Fukunaga, T., Kobayashi, K.L.I., and Nakashima, H. (1985) Photoluminescence from AlGaAs-GaAs single quantum wells with growth interrupted hetero-interfaces grown by molecular beam epitaxy. Jpn. J. Appl. Phys. 24:L510-L512.
7. Gibson, J.M., and Treacy, M.M.J. (1984) The effect of elastic relaxation on the local structure of lattice modulated thin films. Ultramicroscopy 14:345-350.
8. Gibson, J.M., Hull, R., Bean, J.C., and Treacy, M.M.J. (1985) Elastic relaxation in transmission electron microscopy of strained-layer superlattices. Appl. Phys. Lett. 46:649-651.
9. Glaisher, R.W., Spargo, A.C.E., and Smith, D.J. (1989a) A theoretical analysis of HREM imaging for 〈110〉 tetrahedral semiconductors. Ultramicroscopy 27:19-34.
10. Glaisher, R.W., Spargo, A.C.E., and Smith, D.J. (1989b) A systematic analysis of HREM imaging of elemental semiconductors. Ultramicroscopy 27:35-52.
11. Hirsch, P.B., Howie, A., Nicholson, R.B., Pashley, D.W., and Welan, M.J. (1965) Electron Microscopy of Thin Crystals. Butterworth, London, p. 100.
12. Ide, T., Yamashita, A., and Mizutani, T. (1992) Direct observations of the growth interruption effect for molecular beam epitaxy growth on GaAs(001) by scanning tunneling microscopy. Phys. Rev. B. 46:1905-1908.
13. Ikarashi, N., Tanaka, M., Baba, T., Sakaki, H., and Ishida, K. (1993) High-resolution transmission electron microscopy of AlAs/GaAs interfacial structure in the 〈110〉 projection. Jpn. J. Appl. Phys. 32:2824-2831.
14. Ikarashi, N., Akimoto, K., Tatsumi, T., and Ishida, K. (1994) Ordered structure at Si/Ge interfaces. Phys. Rev. Lett. 72:3198-3201.
15. Ikarashi, N., Oshiyama, A., Sakai, A., and Tatsumi, T. (1995) Role of Ge surface segregation in Si/Ge interfacial ordering: Interface formation on a monohydride surface. Phys. Rev. B. 51:14786-14789.
16. Ishizuka, K. (1985) Contrast transfer of crystal images in TEM. Ultramicroscopy 5:55-65.
17. Jesson, D.E., Pennycook, S.J., and Baribeau, J.-M. (1991) Direct imaging of interfacial ordering in Ultrathin (SimGen)p superlattices. Phys. Rev. Lett., 66:750-753.
18. Kelires, P.C., and Tersoff, J., (1989) Equilibrium alloy properties by direct simulation: Oscillatory segregation at the Si-Ge(001) 2 X 1 surface. Phys. Rev. Lett. 63:1164-167.
19. Laval, J.Y., Delamarre, C., Dubon, A., Schiffmacher, G., Teste de Sagey, G., Guenais, B., and Regreny, A. (1987) Atomic structure of interfaces in GaAs/AlGaAs superlattices. J. Physiol. (Paris) (Colloq. C5) 48:97-99.
20. LeGoues, F.K., Kesan, V.P., Iyer, S.S., Tersoff, J., and Tromp, R. (1990) Surface-stress-induced order in SiGe alloy films. Phys. Rev. Lett. 64:2038-2041.
21. Maher, D.M., Fraser, H.L., Humphreys, C.J., Knoell, R.V., and Bean, J.C. (1987) Detection and measurement of local distortions in a semiconductor layered structure by convergent-beam electron diffraction. Appl. Phys. Lett. 50:574-576.
22. Müller, E., Nissen, H.-U., Ospelt, M., and von Känel, H. (1989) Chemical ordering and boundary structure in strained-layer Si-Ge superlattices. Phys. Rev. Lett. 63:1819-1822.
23. Neave, J.H., Joyce, B.A., Dobson, P.J., and Norton, N. (1983) Dynamics of film growth of GaAs by MBE from RHEED observations. Appl. Phys. A31:1-8.
24. Oshiyama, A. (1995) Structure of steps and appearances of {311} facets on Si(001) surfaces. Phys. Rev. Lett. 74:130-133 (and references therein).
25. Ourmazd, A., Kim, Y., and Bode, M. Mater. (1990) Diffusion and interdiffusion in multilayered semiconductor system. Res. Soc. Symp. Proc. 163:639-646.
26. Pashley, M.D., Haberern, K.W., and Gaines, J.M. (1991) Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxy. Appl. Phys. Lett. 58:406-408.
27. Petroff, P.M. (1977) Transmission electron microscopy of interfaces in III-V compound semiconductors. J. Vac. Sci. Technol. 14:973-978.
28. Petroff, P.M., Gossard, A.C., Weigmann, W., and Savage, A. (1978) Crystal growth kinetics in (GaAs)m-(AlAs)n superlattices deposited by molecular beam epitaxy. J. Cryst. Growth 44:5-13.
29. Poudoulec, A., Guenais, B., D'anterroches, C., and Regreny, A. (1990) Interface structure of a GaAs-AlAs superlattice MBE grown on a GaAs vicinal surface. J. Cryst. Growth 100:529-538.
30. Pukite, P.R., Petrich, G.S., Batra, S., and Choen, P.I. (1989) The meandering of steps on GaAs(001). J. Cryst. Growth 95:269-272.
31. Sakaki, H., Tanaka, M., and Yoshino, J. (1985) One atomic layer heterointerface fluctuations in GaAs/AlAs quantum well structures and their suppression by insertion of smoothing period in molecular beam epitaxy. Jpn. J. Appl. Phys. 24:L417-L420.
32. Sakaki, H., Noda, T., Tanaka, M., Motohisa, J., Kadoya, Y., Ikarashi, N. (1993) Atomic scale understanding and controllability of heterointerfaces in quantum microstructure. In: Semiconductor Interfaces at the Sub-Nanometer Scale. H.W.M. Salemink, ed. (NATO/ASI series E.), vol. 243, pp. 217-230.
33. Stenkamp, D., and Jäger, W. (1993) Compositional and structural characterization of SiGe alloys and heterostructures by high-resolution transmission electron microscopy. Ultramicroscopy 50: 321-354.
34. Takayangi, K., Tanishiro, Y., Takahashi, S., and Takahashi, M. (1985) Structure analysis of Si(111) 7 X 7 reconstructed surface by transmission electron diffraction. Surf. Sci. 164:367-392.
35. Tanaka, M., and Sakaki, H. (1987) Atomic models of interface structures of GaAs-AlGaAs grown by interrupted and uninterrupted MBE. J. Cryst. Growth 81:153-158.
36. Tanaka, M., Sakaki, H., and Yoshino, J. (1986) Atomic-scale structures of top and bottom heterointerfaces in GaAs-AlGaAs quantum wells prepared by molecular beam epitaxy with growth interruption. Jpn. J. Appl. Phys. 25:L155-L158.