Structural studies on MOCVD grown GaN and AlGaN using atomic force microscopy

Materials Chemistry and Physics

Volumn 64, Issue 3, 2000, Pages 260-264

  Qhalid Fareed, R S ^a   Juodkazis, S ^a   Chung, S H ^a   Sugahara, T ^a   Sakai, S ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; LATTICE MISMATCH; OPEN CORE DISLOCATION; STRANSKI-KRASTANOV MODE; THREADING DISLOCATION;

SURFACE STRUCTURE;

EID: 0033734162     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(99)00234-5     Document Type: Article

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