Junction barrier effects on the microwave power performance of double heterojunction bipolar transistors

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 1993, Pages 52-61

  Sugeng, B R A ^a   Wei, C J ^a   Hwang, J C M ^a   Song, J I ^a   Hong, W P ^a   Hayes, J R ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK TOPOLOGY; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

COLLECTOR BASE HETEROJUNCTION BARRIER; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; JUNCTION BARRIER EFFECTS; MICROWAVE POWER PERFORMANCE;

BIPOLAR TRANSISTORS;

EID: 0027885929     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)