A high-performance AlInAs/InGaAs/InP DHBT K-Band power cell

IEEE Microwave and Guided Wave Letters

Volumn 7, Issue 10, 1997, Pages 323-325

  Virk, Robinder S ^a   Chen, Mary Y ^a   Nguyen, Chanh ^a   Liu, Takyiu ^a   Matloubian, Mehran ^a   Rensch, David B ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POWER MEASUREMENT; ETCHING; NATURAL FREQUENCIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

POWER ADDED EFFICIENCY (PAE); POWER CELL;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031259220     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.631189     Document Type: Article

References (8)

1. C. Nguyen et al., "AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications," IEEE Electron Device Lett., vol. 17, no. 3, pp. 133-135, 1996.
2. _, "AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications," in Int. Electron Devices Meet. Tech. Dig., 1995, pp. 799-802.
3. L. A. Coldren et al., "Combined dry and wet etching techniques to form planar (001) facets in GaInAsP/InP double heterostructure," Electron. Lett., vol. 18, no. 5, pp. 235-237, 1982.
4. S. Tadayon et al., "Application of micro-airbridge isolation in high speed HBT fabrication," Electron. Lett., vol. 29, no. 1, pp. 26-27, 1993.
5. D. Sawdai et al., "High power performance InP/InGaAs single HBT's," in Proc. 22nd Int. Symp. on Compound Semiconductors, 1995, pp. 621-626.
6. B. Hughes et al., "Accurate on-wafer power and harmonic measurements of millimeter-wave amplifiers and devices," in IEEE MTT-S Int. Microwave Symp. Dig., 1992, pp. 1019-1022.
7. M. Chen et al., "High-performance AlInAs/GaInAs/InP DHBT X-Band power cell with InP emitter-ballast resistor," in Proc. IEEE/Cornell Conf., Aug. 1995, pp. 573-582.
8. H. F. Chau et al., "High-power, high-efficiency K-Band AlGaAs/GaAs heterojunction bipolar transistors," in IEEE GaAs IC Symp., 1996, pp. 95-98.