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Physica B: Condensed Matter

Volumn 283, Issue 1-3, 2000, Pages 130-134

In-plane strain and shape analysis of Si/SiGe nanostructures by grazing incidence diffraction

(9) Zhuang, Y a Pietsch, U b Stangl, J a Holy V c Darowski, N b Grenzer, J b Zerlauth, S a Schaffler F a Bauer, G a

a JOHANNES KEPLER UNIVERSITY LINZ (Austria)

b UNIVERSITY OF POTSDAM (Germany)

c MASARYK UNIVERSITY (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; FINITE ELEMENT METHOD; HOLOGRAPHY; LITHOGRAPHY; MULTILAYERS; NANOSTRUCTURED MATERIALS; REFRACTIVE INDEX; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STRAIN; STRESS ANALYSIS; X RAY CRYSTALLOGRAPHY;

GRAZING INCIDENCE DIFFRACTION (GID); HOLOGRAPHIC LITHOGRAPHY; SILICON GERMANIDE;

HETEROJUNCTIONS;

EID: 0033731378 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)01905-5 Document Type: Article

Times cited : (5)

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