Mechanism of reactive ion etching of 6H-SiC in CHF3/O2 gas mixtures

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 825-828

  Sieber, N ^a   Ristein, J ^a   Ley, L ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Etching Model; Reactive Ion Etching; Surface Chemistry

Indexed keywords

AMORPHOUS MATERIALS; BINARY MIXTURES; FLUORINE COMPOUNDS; OXYGEN; PHOTOEMISSION; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE; SURFACE STRUCTURE;

ARGON ION DEPTH PROFILING; ETCHING MODEL;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031648425     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (6)

1. N. Sieber, M. Hollering, L. Ley, Diamond & Rel. Mat., in press
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