High performance InP-based heterostructure barrier varactors in single and stack configuration

Electronics Letters

Volumn 32, Issue 15, 1996, Pages 1417-1418

  Lheurette, E ^a   Mounaix, P ^a   Salzenstein, P ^a   Mollot, F ^a   Lippens, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

III V semiconductors; Semiconductor diodes; Varactors

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; FABRICATION; HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH;

DOUBLE BARRIER VARACTOR; HETEROSTRUCTURE BARRIER VARACTORS; LAYER COMPLEXITY; SINGLE BARRIER VARACTOR;

VARACTORS;

EID: 0030188617     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960893     Document Type: Article

References (6)

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