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Volumn 578, Issue , 2000, Pages 87-92

Dislocations and internal stresses in thin films: a discrete-continuum simulation

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; ELASTICITY; FINITE ELEMENT METHOD; INTERFACES (MATERIALS); LATTICE CONSTANTS; PLASTICITY; STRESSES; SUBSTRATES;

EID: 0033718419     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (4)

References (11)
  • 1
    • 0030287605 scopus 로고    scopus 로고
    • Strain relaxation and dislocations in SiGe/Si structures
    • P. Mooney. Strain relaxation and dislocations in SiGe/Si structures. Mat. Sci. Engng., R17, 105-146, 1996.
    • (1996) Mat. Sci. Engng. , vol.R17 , pp. 105-146
    • Mooney, P.1
  • 2
    • 0030105576 scopus 로고    scopus 로고
    • Plastic relaxation and relaxed buffer layers for semiconductor epitaxy
    • R. Beanland, D. Dunstand, and P. Goodhew. Plastic relaxation and relaxed buffer layers for semiconductor epitaxy. Adv. Phys., 45, 87-146, 1996.
    • (1996) Adv. Phys. , vol.45 , pp. 87-146
    • Beanland, R.1    Dunstand, D.2    Goodhew, P.3
  • 3
    • 36549104246 scopus 로고
    • A criterion for arrest of a threading dislocation in a strained epitaxial layer due to an interface dislocation in its path
    • L. Freund. A criterion for arrest of a threading dislocation in a strained epitaxial layer due to an interface dislocation in its path. J. Appl. Phys., 68, 2073-2080, 1990.
    • (1990) J. Appl. Phys. , vol.68 , pp. 2073-2080
    • Freund, L.1
  • 4
    • 3042957491 scopus 로고
    • The mechanics of dislocations in strained-layer semiconductor materials
    • L. Freund. The mechanics of dislocations in strained-layer semiconductor materials. Adv. Appl. Mechanics, 30, 1-66, 1994.
    • (1994) Adv. Appl. Mechanics , vol.30 , pp. 1-66
    • Freund, L.1
  • 5
    • 0001003633 scopus 로고    scopus 로고
    • Interaction of threading and misfit dislocations in a strained epitaxial layer
    • K. Schwarz and Terzoff. Interaction of threading and misfit dislocations in a strained epitaxial layer. Appl. Phys. Lett., 69, 1220-1222, 1996.
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 1220-1222
    • Schwarz, K.1    Terzoff2
  • 6
    • 0000668939 scopus 로고    scopus 로고
    • Simulation of dislocations on the mesoscopic scale. II: Application to a strained-layer relaxation
    • K. Schwarz. Simulation of dislocations on the mesoscopic scale. II: Application to a strained-layer relaxation. J. Appl. Phys., 85, 120-129, 1999.
    • (1999) J. Appl. Phys. , vol.85 , pp. 120-129
    • Schwarz, K.1
  • 9
    • 0002551721 scopus 로고    scopus 로고
    • Mesoscopic simulations of dislocations and plasticity
    • B. Devincre and L. P. Kubin. Mesoscopic simulations of dislocations and plasticity. Mat. Sci. Engng, A234-236, 8-14, 1997.
    • (1997) Mat. Sci. Engng , vol.A234-236 , pp. 8-14
    • Devincre, B.1    Kubin, L.P.2
  • 10
    • 0032591815 scopus 로고    scopus 로고
    • Coupling of mesoscopic and macroscopic simulations of plastic deformation
    • C. Lemarchand, B. Devincre, L. P. Kubin, and J. L. Chaboche. Coupling of mesoscopic and macroscopic simulations of plastic deformation. In MRS Symp. Proc., 538, 63-68, 1999.
    • (1999) MRS Symp. Proc. , vol.538 , pp. 63-68
    • Lemarchand, C.1    Devincre, B.2    Kubin, L.P.3    Chaboche, J.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.