Silicon single electron switch with an electrically formed quantum dot

Annual Device Research Conference Digest

Volumn , Issue , 1998, Pages 48-49

  Kim, Dae Hwan ^a   Lee, Jong Duk ^a   Park, Byung Gook ^a   Lee, Hyung Gyoo ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; ELECTRON TUNNELING; GATES (TRANSISTOR); MONTE CARLO METHODS; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS;

DUAL GATE STRUCTURE; SINGLE ELECTRON SWITCHING; SINGLE ELECTRON TRANSISTOR;

TRANSISTORS;

EID: 0032314583     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)