Selective growth of CdTe on Si and GaAs substrates using metalorganic vapor phase epitaxy

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 765-769

  Zhang, R ^a   Bhat, I ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; FILM GROWTH; MASKS; MERCURY COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON NITRIDE; THIN FILMS;

EPITAXIAL LATERAL OVERGROWTH; LATTICE MISMATCHED; MERCURY CADMIUM TELLURIDE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033716787     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0222-1     Document Type: Article

References (13)

1. T.J. deLyon, J.E. Jenson, M.D. Gorwitz, C.A. Cockrum, S.M. Johnson, and G.M. Venzor, J. Electron. Mater. 28, 705 (1999).
2. R. Korenstein, P. Madisan, and P. Hallock, J. Vac. Sci. Technol. 10B, 1370 (1992).
3. W.S. Wang and I. Bhat, J. Electron. Mater. 24, 1047 (1995).
4. A. Usui, H. Sunakawa, A. Sakai, and A.A. Yamaguchi, Jpn. J. Appl. Phys. 36, L899 (1997).
5. O.H. Nam, M.D. Bremser, T.S. Zheleva, and R.F. Davis, Appl. Phys. Lett. 71, 2638 (1997).
6. S. Nakamura et al., Appl. Phys. Lett. 72, 211 (1998).
7. L. Jastrzebski, J. Cryst. Growth 63, 493 (1983).
8. R. McClelland, C. Bozler, and J. Fan,Appl. Phys. Lett. 37, 560 (1980).
9. R. Gale, R. McCllend, J. Fan, and C. Bozler, Appl. Phys. Lett. 41, 545 (1982).
10. P. Vohl, C. Bozler, R. McCleelland, A. Chu, and A. Strauss, J. Cryst. Growth 55, 410 (1982).
11. J.S. Foord, C.L. French, C.L. Levoguer, G.J. Davies, and P.J. Skevington, Semicond. Sci. Technol. 8, 959 (1993).
12. E. Veuhoff, J. Cryst. Growth 195, 444 (1998).
13. M. Prutton, Introduction to Surface Physics (New York: Oxford University Press, 1993), p. 148.