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Volumn 74, Issue 10, 1999, Pages 1424-1426

Interface and bulk defects in SiC/GaN heterostructures characterized using thermal admittance spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0013100202     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123570     Document Type: Article
Times cited : (7)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.