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Volumn 447, Issue 1, 2000, Pages 160-166

Measurement of SEU cross sections in the CDF SVX3 ASIC using 63 MeV protons

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; GATES (TRANSISTOR); PARTICLE BEAM TRACKING; PROTON IRRADIATION; READOUT SYSTEMS; SILICON SENSORS;

EID: 0033707253     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(00)00184-4     Document Type: Article
Times cited : (3)

References (11)
  • 1
  • 8
    • 0031624932 scopus 로고    scopus 로고
    • The effect of the angle of incidence on proton induced single events in devices - A critical assessment by modeling
    • IEEE
    • A. Akkerman, J. Barak, J. Levinson, Y. Lifshitz, The effect of the angle of incidence on proton induced single events in devices - a critical assessment by modeling, RADECS 97 Conference Report, IEEE, 1998, p. 546.
    • (1998) RADECS 97 Conference Report , pp. 546
    • Akkerman, A.1    Barak, J.2    Levinson, J.3    Lifshitz, Y.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.