|
Volumn , Issue , 1998, Pages 546-552
|
Effect of the angle of incidence on proton induced single events in devices - a critical assessment by modeling
a
|
Author keywords
[No Author keywords available]
|
Indexed keywords
MATHEMATICAL MODELS;
MONTE CARLO METHODS;
PROTON IRRADIATION;
RADIATION DETECTORS;
SEMICONDUCTING SILICON;
SINGLE EVENT UPSET;
SURFACE BARRIER DETECTORS;
RADIATION EFFECTS;
|
EID: 0031624932
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (1)
|
References (14)
|