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Volumn 15, Issue 6, 2000, Pages 630-637

Optimization of a resonant cavity enhanced MSM photodetector

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; COMPUTER SIMULATION; INTEGRAL EQUATIONS; MIRRORS; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SUBSTRATES;

EID: 0033703542     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/6/326     Document Type: Article
Times cited : (7)

References (18)
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    • Bowers J E and Burrus C A 1987 Ultrawide-band long-wavelength p-i-n photodetector J. Lightwave Technol. 5 1339-49
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    • Bowers, J.E.1    Burrus, C.A.2
  • 4
    • 0026121018 scopus 로고
    • Enhancement of quantum efficiency in thin photodiode through absorptive resonance
    • Chin A and Chang T Y 1991 Enhancement of quantum efficiency in thin photodiode through absorptive resonance IEEE J. Lightwave Technol. 9 321-8
    • (1991) IEEE J. Lightwave Technol. , vol.9 , pp. 321-328
    • Chin, A.1    Chang, T.Y.2
  • 5
    • 0026116405 scopus 로고
    • InGaAs metal-semiconductor-metal photodetector for long wavelength optical communications
    • Soole J and Schumacher H 1991 InGaAs metal-semiconductor-metal photodetector for long wavelength optical communications IEEE J. Quantum Electron. 27 737-52
    • (1991) IEEE J. Quantum Electron. , vol.27 , pp. 737-752
    • Soole, J.1    Schumacher, H.2
  • 6
    • 0026223285 scopus 로고
    • Two-dimensional ensemble Monte Carlo calculation of pulse responses of submicrometer GaAs metal-semiconductor-metal photodetectors
    • Sano E 1991 Two-dimensional ensemble Monte Carlo calculation of pulse responses of submicrometer GaAs metal-semiconductor-metal photodetectors IEEE Trans. Electron Devices 38 2075-81
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 2075-2081
    • Sano, E.1
  • 7
    • 0014705867 scopus 로고
    • Transport equation for electrons in two-valley semiconductors
    • Blotekjaer K 1970 Transport equation for electrons in two-valley semiconductors IEEE Trans. Electron Devices 17 38-47
    • (1970) IEEE Trans. Electron Devices , vol.17 , pp. 38-47
    • Blotekjaer, K.1
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    • 0023399035 scopus 로고
    • Numerical simulation of GaAs MESFETS including velocity overshoot
    • Stenzel R, Elschner H and Spallek R 1987 Numerical simulation of GaAs MESFETS including velocity overshoot Solid-State Electron. 30 873-7
    • (1987) Solid-state Electron. , vol.30 , pp. 873-877
    • Stenzel, R.1    Elschner, H.2    Spallek, R.3
  • 9
    • 0025507966 scopus 로고
    • A phenomenological approach to estimating transit times in GaAs HBT's
    • Zhou H, Pulfrey D L and Yedlin M J 1990 A phenomenological approach to estimating transit times in GaAs HBT's IEEE Trans. Electron Devices 37 2113-20
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 2113-2120
    • Zhou, H.1    Pulfrey, D.L.2    Yedlin, M.J.3
  • 10
    • 0027624298 scopus 로고
    • Nonstationary and nonlinear response of a PIN photodiode made of a two-valley semiconductor
    • Radunović J and Gvozdić D 1993 Nonstationary and nonlinear response of a PIN photodiode made of a two-valley semiconductor IEEE Trans. Electron Devices 40 1238-44
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 1238-1244
    • Radunović, J.1    Gvozdić, D.2
  • 12
    • 0031099845 scopus 로고    scopus 로고
    • Application of conformal mapping in modeling the response of MSM photodetector
    • Gvozdić D and Radunović J 1997 Application of conformal mapping in modeling the response of MSM photodetector Int. J. Numer. Modeling 10 71-82
    • (1997) Int. J. Numer. Modeling , vol.10 , pp. 71-82
    • Gvozdić, D.1    Radunović, J.2
  • 13
    • 0031140364 scopus 로고    scopus 로고
    • Transit time of electrons and holes in micron and submicron MSM photodetectors
    • Gvozdić D and Radunović J 1997 Transit time of electrons and holes in micron and submicron MSM photodetectors Semicond. Sci. Technol. 12 589-94
    • (1997) Semicond. Sci. Technol. , vol.12 , pp. 589-594
    • Gvozdić, D.1    Radunović, J.2
  • 14
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    • The influence of nonstationary carrier transport on the bandwidth of P-I-N photodiode
    • Matavulj P, Gvozdić D and Radunović J 1997 The influence of nonstationary carrier transport on the bandwidth of P-I-N photodiode IEEE/OSA J. Lightwave Technol. 15 2270-7
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    • Matavulj, P.1    Gvozdić, D.2    Radunović, J.3
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    • Analysis of transfer function of metal-semiconductor-metal photodetector equivalent circuit
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.