High-speed resonant-cavity SAM avalanche photodiodes

Annual Device Research Conference Digest

Volumn , Issue , 1997, Pages 166-167

  Nie, H ^a   Anselm, K A ^a   Hu, C ^a   Lenox, C ^a   Streetman, B G ^a   Campbell, J C ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; BANDWIDTH; CAVITY RESONATORS; ELECTRIC BREAKDOWN OF SOLIDS; GAIN CONTROL; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; SPURIOUS SIGNAL NOISE;

SEPARATE ABSORPTION AND MULTIPLICATION (SAM) AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0030650607     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)