Transit time of electrons and holes in micron and submicron MSM photodetectors

Semiconductor Science and Technology

Volumn 12, Issue 5, 1997, Pages 589-594

  Gvozdić, Dejan M ^a   Radunović, Jovan B ^a  

^a School of Electrical Engineering   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRODES; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

BIAS VOLTAGE; ELECTRON HOLE; INTERVALLEY TRANSFER; METAL SEMICONDUCTOR METAL PHOTODETECTOR; PHENOMENOLOGICAL MODEL; RESPONSE TIME; TRANSIT TIME;

PHOTODETECTORS;

EID: 0031140364     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/5/012     Document Type: Article

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