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Volumn 10, Issue 2, 1997, Pages 71-82

Application of conformal mapping in modelling the response of an MSM photodetector

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; MATHEMATICAL MODELS; PHOTODETECTORS; PHOTONS;

EID: 0031099845     PISSN: 08943370     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-1204(199703)10:2<71::AID-JNM256>3.0.CO;2-J     Document Type: Article
Times cited : (1)

References (12)
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  • 2
    • 0025485197 scopus 로고
    • A device model for metal-semiconductor-metal photodetectors and its application to optoelectronic integrated circuit simulation
    • E. Sano, "A device model for metal-semiconductor-metal photodetectors and its application to optoelectronic integrated circuit simulation", IEEE. Trans. Electron Devices, 37, 1964-1968 (1990).
    • (1990) IEEE. Trans. Electron Devices , vol.37 , pp. 1964-1968
    • Sano, E.1
  • 3
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    • Two-dimensional ensemble Monte Carlo calculation of pulse responses of submicrometar GaAs metal-semiconductor-metal photodetectors
    • E. Sano, "Two-dimensional ensemble Monte Carlo calculation of pulse responses of submicrometar GaAs metal-semiconductor-metal photodetectors", IEEE Trans. Electron Devices, 38, (9), 2075-2081 (1991).
    • (1991) IEEE Trans. Electron Devices , vol.38 , Issue.9 , pp. 2075-2081
    • Sano, E.1
  • 4
    • 0027624298 scopus 로고
    • Nonstationary and nonlinear response of a p-i-n photodiode made of a two-valley semiconductor
    • J. B. Radunović and D. M. Gvozdić, "Nonstationary and nonlinear response of a p-i-n photodiode made of a two-valley semiconductor", IEEE Trans. Electron Devices, 40, (7), 1238-1245 (1993).
    • (1993) IEEE Trans. Electron Devices , vol.40 , Issue.7 , pp. 1238-1245
    • Radunović, J.B.1    Gvozdić, D.M.2
  • 5
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    • Numerical simulation of GaAs MESFETS including velocity overshoot
    • R. Stenzel, H. Elschner and R. Spallek, "Numerical simulation of GaAs MESFETS including velocity overshoot", Solid-State Electron., 30, (8), 873-877 (1987).
    • (1987) Solid-State Electron. , vol.30 , Issue.8 , pp. 873-877
    • Stenzel, R.1    Elschner, H.2    Spallek, R.3
  • 6
    • 0025507966 scopus 로고
    • A phenomenological approach to estimating transit times in GaAs HBT's
    • H. Zhou, D. L. Pulfrey and M. J. Yedlin, "A phenomenological approach to estimating transit times in GaAs HBT's," IEEE Trans. Electron Devices, 37, (10), 2113-2120 (1990).
    • (1990) IEEE Trans. Electron Devices , vol.37 , Issue.10 , pp. 2113-2120
    • Zhou, H.1    Pulfrey, D.L.2    Yedlin, M.J.3
  • 8
    • 0014705867 scopus 로고
    • Transport equation for electrons in two-valley semiconductors
    • K. Blotekjaer, "Transport equation for electrons in two-valley semiconductors", IEEE Trans. Electron Devices, ED-17, (1) 38-47 (1970).
    • (1970) IEEE Trans. Electron Devices , vol.ED-17 , Issue.1 , pp. 38-47
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  • 9
    • 0027627248 scopus 로고
    • An analytical expression for the electric field in MSM structures
    • D. M. Gvozdić, J. B. Radunović and J. M. Elazar, "An analytical expression for the electric field in MSM structures", Int. J. Infrared Millim. Waves, 14, (7), 1485-1493 (1993).
    • (1993) Int. J. Infrared Millim. Waves , vol.14 , Issue.7 , pp. 1485-1493
    • Gvozdić, D.M.1    Radunović, J.B.2    Elazar, J.M.3
  • 10
    • 0001196277 scopus 로고
    • Properties of alternately charged coplanar parallel strips by conformal mappings
    • Y. C. Lim and R. A. Moore, "Properties of alternately charged coplanar parallel strips by conformal mappings", IEEE Trans. Electron Devices, ED-15, 173-180 (1968).
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  • 11
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    • Transit-time considerations in p-i-n diodes
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  • 12
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    • Influence of space charges on the impulse response of InGaAs metal-semiconductor-metal photodetectors
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    • (1992) J. Lightw. Technol. , vol.10 , Issue.6 , pp. 753-759
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.