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Volumn 43, Issue 2, 1996, Pages 370-372

Nonstationary response of MSM photodetectors

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHARGE CARRIERS; COMPUTER SIMULATION; DATA STORAGE EQUIPMENT; ELECTRIC CURRENTS; ELECTRODES; ELECTRONS; FREQUENCY RESPONSE; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES;

EID: 0030080951     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.481745     Document Type: Article
Times cited : (5)

References (11)
  • 1
    • 0025522696 scopus 로고
    • Transit-time limited frequency response of InGaAs MSM photodetectors
    • J. B. D. Soole and H. Schumacher, "Transit-time limited frequency response of InGaAs MSM photodetectors," IEEE Trans. Electron Devices, vol. 37, pp. 2285-2291, 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 2285-2291
    • Soole, J.B.D.1    Schumacher, H.2
  • 2
    • 0025485197 scopus 로고
    • A device model for metal-semiconductor-metal pliotodetectors and its application to optoelectronic integrated circuit simulation
    • E. Sano, "A device model for metal-semiconductor-metal pliotodetectors and its application to optoelectronic integrated circuit simulation," IEEE. Trans. Electron Devices, vol. 37, pp. 1964-1968, 1990.
    • (1990) IEEE. Trans. Electron Devices , vol.37 , pp. 1964-1968
    • Sano, E.1
  • 3
    • 0026223285 scopus 로고
    • Two-dimensional ensemble Monte Carlo calculation of pulse responses of submicrometar GaAs metal-semiconductor-metal photodetectors
    • _, "Two-dimensional ensemble Monte Carlo calculation of pulse responses of submicrometar GaAs metal-semiconductor-metal photodetectors," IEEE Trans. Electron Devices, vol. 38, no. 9, pp. 2075-2081, 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , Issue.9 , pp. 2075-2081
  • 4
    • 0027624298 scopus 로고
    • Nonstationary and nonlinear response of a p-i-n photodiode made of a two-valley semiconductor
    • J. B. Radunovié and D. M. Gvozdic, "Nonstationary and nonlinear response of a p-i-n photodiode made of a two-valley semiconductor," IEEE Trans. Eleclrtm Devices, vol. 40, no. 7, pp. 1238-1245, 1993.
    • (1993) IEEE Trans. Eleclrtm Devices , vol.40 , Issue.7 , pp. 1238-1245
    • Radunovié, J.B.1    Gvozdic, D.M.2
  • 5
    • 36849126770 scopus 로고
    • Transit-time considerations in p-i-n diodes
    • G. Lucovsky, R. F. Schwartz, and R. B. Emmons, "Transit-time considerations in p-i-n diodes," J. Appl. Phys., vol. 35, no. 3 pp. 622-628, 1964
    • (1964) J. Appl. Phys. , vol.35 , Issue.3 , pp. 622-628
    • Lucovsky, G.1    Schwartz, R.F.2    Emmons, R.B.3
  • 6
    • 0027627248 scopus 로고
    • An analytical expression for the electric field in MSM structures
    • D. M. Gvozdic, J. B. Radunovic, and J. M. Elazar, "An analytical expression for the electric field in MSM structures," Int. J. Infrared & Millimeter Waves, vol. 14, no. 7, pp. 1485-1493, 1993.
    • (1993) Int. J. Infrared & Millimeter Waves , vol.14 , Issue.7 , pp. 1485-1493
    • Gvozdic, D.M.1    Radunovic, J.B.2    Elazar, J.M.3
  • 7
    • 0014705867 scopus 로고
    • Transport equation for electrons in two-valley semiconductors
    • K. Blotekjaer, "Transport equation for electrons in two-valley semiconductors," IEEE Tram. Electron Devices, vol. ED-17, no. 1. pp. 38-47, 1970
    • (1970) IEEE Tram. Electron Devices , vol.17 ED , Issue.1 , pp. 38-47
    • Blotekjaer, K.1
  • 8
    • 0023399035 scopus 로고
    • Numerical simulation of GaAs MESFBTS including velocity overshoot
    • R. Stenzel, H. Elschner, and R. Spallek, "Numerical simulation of GaAs MESFBTS including velocity overshoot," Solid-State Electron., vol. 30, no. 8, pp. 873-877, 1987.
    • (1987) Solid-State Electron , vol.30 , Issue.8 , pp. 873-877
    • Stenzel, R.1    Elschner, H.2    Spallek, R.3
  • 9
    • 0025507966 scopus 로고
    • A Phenomenological approach to estimating transit times in GaAs HBT's
    • H. Zhou, D. L. Pulfrey, and M. J. Yedlin, "A Phenomenological approach to estimating transit times in GaAs HBT's," IEEE Trans. Electron Devices, vol. 37, no 10, pp. 2113-2120, 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , Issue.10 , pp. 2113-2120
    • Zhou, H.1    Pulfrey, D.L.2    Yedlin, M.J.3
  • 11


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.