MBE growth and properties of HgCdTe long wave and very long wave infrared detectors

Materials Research Society Symposium - Proceedings

Volumn 421, Issue , 1996, Pages 335-340

  Rajavel, R D ^a   Wu, O K ^a   Jensen, J E ^a   Cockrum, C A ^a   Venzor, G M ^a   Patten, E A ^a   Goetz, P M ^a   Leonard, D B ^a   Johnson, S M ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; IMPURITIES; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SUBSTRATES;

LONG WAVE INFRARED DETECTORS; SUBSTRATE TEMPERATURE;

MERCURY COMPOUNDS;

EID: 0030357429     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-421-335     Document Type: Conference Paper

References (9)