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Volumn 23, Issue 2, 2000, Pages 341-351

A simulation study of IC layout effects on thermal management of die attached GaAs ICs

Author keywords

Emitter optimization; Gaas; Heat spreader; Patran, simulation; Thermal

Indexed keywords

COMPUTER SIMULATION; FINITE ELEMENT METHOD; HEAT TRANSFER; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; SUBSTRATES; THERMAL EFFECTS; THERMODYNAMIC PROPERTIES;

EID: 0033701563     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/6144.846773     Document Type: Article
Times cited : (23)

References (12)
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    • Thermal properties of power HBT'sIEEE Tran
    • 40, pp. 2171-2177, Dec. 1993.
    • J. HiggensThermal properties of power HBT's," IEEE Tran. Electron. Devices, vol. ED-40, pp. 2171-2177, Dec. 1993.
    • Electron. Devices, Vol. ED
    • Higgens, J.1
  • 2
    • 0029735586 scopus 로고    scopus 로고
    • Theoretical thermal runaway analysis of hetrojunction bipolar transistors: Junction temperature rise threshold
    • vol. 99, no. 1, pp. 165-172, 1996.
    • L. L Liou, B. Bayraktaroglu, and C. I. HuangTheoretical thermal runaway analysis of hetrojunction bipolar transistors: Junction temperature rise threshold," Solid-State Electron., vol. 99, no. 1, pp. 165-172, 1996.
    • Solid-State Electron.
    • Liou, L.L.1    Bayraktaroglu, B.2    Huang, C.I.3
  • 4
    • 0030082165 scopus 로고    scopus 로고
    • Two-dimensional numerical analysis of AlGaAs/GAAS hetrojunction bipolar transistors including the effects of graded layer, setback layer and self-heating
    • vol. 39, no. 2, pp. 193-199, 1996.
    • A. Kager and J. J. LiouTwo-dimensional numerical analysis of AlGaAs/GAAS hetrojunction bipolar transistors including the effects of graded layer, setback layer and self-heating," Solid-State Electron., vol. 39, no. 2, pp. 193-199, 1996.
    • Solid-State Electron.
    • Kager, A.1    Liou, J.J.2
  • 8
    • 33747869480 scopus 로고    scopus 로고
    • McNeal Schwendler Corporation, PATRAN
    • McNeal Schwendler Corporation, PATRAN, .
  • 11
    • 33747858278 scopus 로고    scopus 로고
    • Englewood Cliffs, NJ: Prentice-Hall, 1991.
    • InP Based Structures. Englewood Cliffs, NJ: Prentice-Hall, 1991.
    • InP Based Structures.
  • 12
    • 0030085690 scopus 로고    scopus 로고
    • Thermal impedance extraction for BipolarTransistors
    • 14, pp. 342-346, Feb. 1967.
    • D. T. Zweidlinger et al., "Thermal impedance extraction for BipolarTransistors," IEEE Trans. Electron. Devices, vol. ED-14, pp. 342-346, Feb. 1967.
    • IEEE Trans. Electron. Devices, Vol. ED
    • Zweidlinger, D.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.