Two-dimensional numerical analysis of AlGaAs/GaAs heterojunction bipolar transistors including the effects of graded layer, setback layer and self-heating

Solid-State Electronics

Volumn 39, Issue 2, 1996, Pages 193-199

  Kager, A ^a   Liou, J J ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NUMERICAL ANALYSIS; PHOTOLITHOGRAPHY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

CUTOFF FREQUENCY; FREE CARRIER ENERGY BALANCED EQUATIONS; SELF HEATING EFFECT; THERMIONIC MECHANISMS; TUNNELING MECHANISMS; TWO DIMENSIONAL NUMERICAL ANALYSIS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030082165     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00142-5     Document Type: Review

References (13)

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