Thermal Properties of Power HBT's

IEEE Transactions on Electron Devices

Volumn 40, Issue 12, 1993, Pages 2171-2177

  Higgins, J Aiden ^a  

^a Science Center Rockwell International ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLIP CHIP DEVICES; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; PRODUCT DESIGN; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS; THERMODYNAMIC PROPERTIES; THERMODYNAMIC STABILITY;

CHIP LAYOUT; FLIP CHIP BONDING; JUNCTION TEMPERATURE; PARTIAL VIAS; POWER DENSITY; THRESHOLD POWER DENSITY;

BIPOLAR TRANSISTORS;

EID: 0027883386     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.249461     Document Type: Article

References (11)

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8. Y. Narayan, David Sarnoff Labs., private communication.
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10. G. C. Taylor et al., “Novel selective plated heatsink key to compact 2 W MMIC amplifier,” in Proc. SPIE, vol. 1475, “MMICs for sensors, radar and communications systems,” Apr. 1991.
11. G. J. Sullivan et al., “Improved thermal performance of AlGaAs/GaAs HBT's by transferring of epitaxial layers to high thermal conductivity substrates,” Electron. Lett., Aug. 1993.