Analysis of surface properties of hetero-epitaxially grown SiC surface on Si substrate

CIRP Annals - Manufacturing Technology

Volumn 49, Issue 1, 2000, Pages 447-450

  Moronuki, Nobuyuki ^a   Furukawa, Yuji ^a  

^a TOKYO METROPOLITAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBONIZATION; MIRRORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES; SURFACE ROUGHNESS; SYNTHESIS (CHEMICAL);

TOROIDAL MIRROR OPTICS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033700934     PISSN: 00078506     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0007-8506(07)62986-2     Document Type: Article

References (9)

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