Investigation of surface formation process of silicon molecular beam epitaxy by atomic force microscopy

CIRP Annals - Manufacturing Technology

Volumn 48, Issue 1, 1999, Pages 453-457

  Furukawa, Y ^a   Kaneko, A ^a  

^a TOKYO METROPOLITAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACES; VAPOR DEPOSITION;

PHYSICAL VAPOR DEPOSITION; SURFACE FORMATION; ULTRA PRECISION MACHINING;

MOLECULAR BEAM EPITAXY;

EID: 0032675110     PISSN: 00078506     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0007-8506(07)63225-9     Document Type: Article

References (11)

1. Kalpakjin, S , Manufacturing Process for Engineering Materials, 1991, Addison-Wesley Publishing company
2. Venkatesh, VC., Marineseu, I.D , 1995, Polishing and Ultraprecision Machining of Semiconductor Substrate Materials, Annals of the CIRP, 44/2 611-618.
3. Furukawa, Y., Kakuta, A., 1996, Molecular Beam Epitaxy (MBE) as an ultra precision machining process, Annals of the CIRP, 45/1 197-200
4. Inoue, N., Tanimoto, M , Kanisawa, K., Hirono, S., Osaka, J , Homma, Y., 1993, In-situ microscopy of MBE growth of GaAs and related materials, Journal of Crystal Growth, 127:956-961
5. Tung, R.T., Schrey, F., 1989, Topography of the Si(111) Surface during Silicon Molecular-Beam Epitaxy, Physical Review Letters, 63/12:1277-1280.
6. De Chiffre, L., Hansen, H.N., Bronstein, A., 1996, Investigation on the Surface Topography in Polishing Using Atomic Force Microscopy, Annals of the CIRP, 45/1:523-528.
7. Lucca, DA, Brinksmeier, E., Goch, G., 1998, Progress in Assessing Surface and Subsurface Integrity, Annals of the CIRP, 47/2:669-693.
8. Ichida,Y., Kishi,K., 1993, Nanotopography of Ultraprecise Ground Surface of Fine Ceramics Using Atomic Force Microscope, Annals of the CIRP, 42/1:647-650.
9. Ishizaka, A , Shiraki, Y, 1986, Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE, Journal of Electrochemical Society, 133/4:666-671.
10. Sze, S.M., 1988, VLSI technology, McGraw-Hill
11. Jaccodine, R J., 1963, Surface Energy of Germanium and Silicon, Journal of Electrochemical Society, 110:524-527.