InAs-GaAs self-assembled quantum dot lasers: Physical processes and device characteristics

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 3, 2000, Pages 489-493

  Mowbray, D J ^a   Harris, L ^a   Fry, P W ^a   Ashmore, A D ^a   Parnell, S R ^a   Finley, J J ^a   Skolnick, M S ^a   Hopkinson, M ^a   Hill, G ^a   Clark, J ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; ELECTRIC CURRENTS; ELECTRON TRANSITIONS; ELECTROOPTICAL DEVICES; GAIN CONTROL; GAIN MEASUREMENT; GROUND STATE; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

HAKKI-PAOLI METHOD; INDIUM ARSENIDE; MODAL GAIN; QUANTUM DOT LASERS;

SEMICONDUCTOR LASERS;

EID: 0033690099     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00371-9     Document Type: Article

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