98-GHz InP/InGaAs HBT Amplifier with 26-dB Gain

IEEE Microwave and Guided Wave Letters

Volumn 9, Issue 12, 1999, Pages 523-525

  Morf, Thomas ^a   Hubscher, Sonja ^a   Huber, Dieter ^a   Huber, Alex ^a   Schwarz, Volker ^a   Jackel, Heinz ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Heterojunction bipolar transistor (HBT); InP InGaAs; millimeter wave amplifier

Indexed keywords

BANDWIDTH; GAIN CONTROL; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MILLIMETER WAVE DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

MILLIMETER WAVE AMPLIFIERS;

MICROWAVE AMPLIFIERS;

EID: 0343303356     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.819419     Document Type: Article

References (6)

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2. T. Morf, D. Huber, A. Huber, V. Schwarz, and H. Jackel, “50 to 70 GHz InP/InGaAs HBT amplifier with 20 dB gain,” in Proc. 11th Int. Conf. Indium Phosphide and Related Materials (IPRM'99), vol. WeB 1-7, pp. 131-134, 1999.
3. A. Huber, D. Huber, C. Bergamaschi, T. Morf, and H. Jackel, “A lumped DC-50 GHz amplifier using InP/InGaAs HBT's,” Electron. Lett., vol. 35, pp. 53-54, Jan. 1999.
4. D. Huber, M. Bitter, T. Morf, C. Bergamaschi, H. Melchior, and H. Jackel, “A 46 GHz bandwidth monolithic InP/InGaAs PIN/SHBTphotoreceiver,” Electron. Lett., vol. 35, p. 40, Jan. 1999.
5. A. Tessmann, W. Haydl, A. Hulsmann, and M. Schlechtweg, “High-gain cascode MMIC's in coplanar technology at W-band frequencies,” IEEE Microwave Guided Wave Lett., vol. 8, pp. 430-431, Dec. 1998.
6. HP-ADS, Hewlett Packard Advanced Design System, Ver. 100.300, Hewlett Packard Company, 3000 Hanover St., Palo Alto, CA 94303 USA.