Unconditionally thermally stable cascode GaAs HBT's for microwave applications

IEEE Microwave and Guided Wave Letters

Volumn 7, Issue 7, 1997, Pages 187-189

  Bayraktaroglu, Burhan ^a   Salib, Mike ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY EFFICIENCY; FEEDBACK; HEAT TRANSFER; MICROWAVES; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMIC STABILITY;

THERMAL STABILITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031192265     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.594859     Document Type: Article

References (8)

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3. W. Liu and A. Khatibzadeh, "The collapse of gain in multi-finger heterojunction bipolar transistors: Its substrate temperature dependence, instability criteria, and modeling," IEEE Trans. Electron Devices, vol. 41, pp. 1698-1707, 1994.
4. G. B. Gao et al., "Emitter ballasting resistor design for, and current handling capability of AlGaAs/GaAs power heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 38, pp. 185-196, 1991.
5. W. Liu, A. Khatibzadeh, J. Sweder, and H. F. Chau, "The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 43, pp. 245-251, 1996.
6. B. Bayraktaroglu et al., "Very high power density CW operation of AlGaAs/GaAs microwave heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 14, pp. 493-495, 1993.
7. R. J. J. Komiak and L. W. Yang, "5 watt high efficiency wideband 7 to 11 GHz HBT MMIC power amplifier," in IEEE Microwave and Millimeter Wave Monolithic Circuits Symp. Tech. Dig., 1995, pp. 17-20.
8. C. A. Bozada et al., "Microwave power heterojunction bipolar transistors fabricated with thermal shunt and bathtub," in IEEE GaAs IC Symp. Dig., 1995, pp. 155-158.