Surface treatment by ar plasma irradiation in electron cyclotron resonance chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 5 A, 2000, Pages 2761-2766

  Hashimoto, Jun Ichi ^a   Ikoma, Nobuyuki ^a   Murata, Michio ^a   Fukui, Jiro ^a   Nomaguchi, Toshio ^a   Katsuyama, Tsukuru ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

0.98 m semiconductor laser; Ar plasma; COD; ECR; GaAs; Native oxides; Surface state

Indexed keywords

ARGON; CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; RADIATION DAMAGE; SEMICONDUCTOR LASERS; SURFACE TREATMENT;

CATASTROPHIC OPTICAL DAMAGE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033686087     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2761     Document Type: Article

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