Process damage in chemically assisted ion beam etching of InP/GaInAsP

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 175-178

  Anand, S ^a   Carlstrom, C F ^a   Landgren, G ^a   Soderstrom, D ^a   Lourdudoss, S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ETCHING; MORPHOLOGY; PHOTOLUMINESCENCE; PLASMA SOURCES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS;

CHEMICALLY ASSISTED ION BEAM ETCHING; NITROGEN ION MILLING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032288095     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)