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Volumn 3, Issue , 1996, Pages 1221-1224
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Noise characteristics of GaAs HBT's
a a
a
M/A COM
(United States)
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Author keywords
[No Author keywords available]
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Indexed keywords
EQUIVALENT CIRCUITS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DEVICE TESTING;
SPURIOUS SIGNAL NOISE;
BIAS CONDITIONS;
EMITTER AREA;
HETEROJUNCTION BIPOLAR TRANSISTORS;
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EID: 0029719706
PISSN: 0149645X
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (7)
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References (4)
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