A 5.5-GHz low noise amplifier in SiGe BiCMOS

European Solid-State Circuits Conference

Volumn , Issue , 1998, Pages 80-83

  Ainspan, Herschel A ^a   Webster, Charles S ^b   Plouchart, Jean Olivier ^a   Soyuer, Mehmet ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT REFERENCE; ON CHIPS; SIGE BICMOS; SWITCHABLE GAIN; THIRD-ORDER INTERMODULATION; TOTAL CURRENT;

SEMICONDUCTING SILICON; SILICON ALLOYS;

LOW NOISE AMPLIFIERS;

EID: 0042846415     PISSN: 19308833     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIR.1998.186213     Document Type: Conference Paper

References (6)

1. D. C. Ahlgren, et. al, "A SiGe HBT BiCMOS Technology for Mixed Signal RF Applications," IEEE Bipolar/ BiCMOS Circuits and Tech. Meet. Proc, pp. 195-7, Oct. 1997.
2. C. D. Hull, et. al., "A Direct-Conversion Receiver for 900 MHz (ISM Band) Spread-Spectrum Digital Cordless Telephone," IEEE J. of Solid-State Circuits, pp. 1955-63, Dec. 1996.
3. R. G. Meyer, et. al., "A 2.5-GHz BiCMOS Transceiver for Wireless LAN's," IEEE J. of Solid-State Circuits, pp. 2097-2104, Dec. 1997.
4. S. P. Voinigescu and M. C. Maliepard, "5.8GHz and 12.6GHz Si Bipolar MMICs," IEEE ISSCC Dig. of Technical Papers, pp. 372-3, Feb. 1997.
5. U. Lott, "Low DC Power Monolithic Low noise Amplifier for Wireless Applications at 5 GHz," IEEE Microwave Millimeter-Wave Monolithic Circuit Symp. Dig., pp. 81-4, June 1996.
6. K.W. Kobayashi, A.K. Oki, L.T. Tran, and D.C. Streit, "Ultra-low DC Power GaAs HBT S-and C-band Low Noise Amplifiers for Portable Wireless Applications," IEEE Trans. MTT, pp. 3055-61, December 1995.