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Journal of Raman Spectroscopy

Volumn 31, Issue 7, 2000, Pages 615-618

Raman characterization of GaN synthesized by N implantation in GaAs substrate

(4) Boudart, B a Pesant, J C a De Jaeger, J C a Dhamelincourt, P A b

a INSTITUT D ELECTRONIQUE (France)

b UNIVERSITÉ DES SCIENCES ET TECHNOLOGIES DE LILLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SUBSTRATES;

950° C; ANNEALING TREATMENTS; GAAS SUBSTRATES; GAAS(001); GAN MATERIAL; N IMPLANTATION; RAMAN CHARACTERIZATION; SEMI-INSULATING SUBSTRATE; SYNTHESISED; UV-RAMAN SPECTROSCOPY;

GALLIUM NITRIDE;

ARSENIC DERIVATIVE; GALLIUM; NITROGEN DERIVATIVE;

CHEMICAL ANALYSIS; CHEMICAL REACTION; CRYSTALLIZATION; RAMAN SPECTROMETRY; REVIEW; SYNTHESIS; TEMPERATURE SENSITIVITY;

EID: 0033652623 PISSN: 03770486 EISSN: None Source Type: Journal
DOI: 10.1002/1097-4555(200007)31:7<615::AID-JRS585>3.0.CO;2-5 Document Type: Review

Times cited : (5)

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