Far UV resonant Raman scattering in hexagonal Ga1-xAlxN alloys

Solid State Communications

Volumn 109, Issue 8, 1999, Pages 519-523

  Demangeot, F ^a   Frandon, J ^a   Renucci, M A ^a   Sands, H S ^b   Batchelder, D N ^b   Briot, O ^c   Ruffenach Clur, S ^c  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b UNIVERSITY OF LEEDS   (United Kingdom)

^c UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

A. Semiconductors; B. Epitaxy; C. Impurities in semiconductors; D. Electron phonon interaction; E. Inelastic light scattering

Indexed keywords

ALUMINUM; CRYSTAL IMPURITIES; ELECTRON TRANSITIONS; ENERGY GAP; GALLIUM ALLOYS; METALLORGANIC VAPOR PHASE EPITAXY; PHONONS; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

DEEP CENTER RECOMBINATION; FROHLICH ELECTRON-PHONON INTERACTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033077192     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00597-3     Document Type: Article

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