Buried-heterostructure long-wavelength vertical-cavity surface-emitting lasers with InGaAsP/InP-GaAs/AlAs DBRs

Electronics Letters

Volumn 36, Issue 1, 2000, Pages 39-40

  Ohiso, Y ^a   Iga, R ^a   Kishi, K ^a   Amano, C ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; HETEROJUNCTIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THIN FILM DEVICES;

DISTRIBUTED BRAGG REFLECTOR (DBR) LASERS; LONG-WAVELENGTH VERTICAL CAVITY SURFACE EMITTING LASERS (LW-VCSEL);

SEMICONDUCTOR LASERS;

EID: 0033640360     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000055     Document Type: Article

References (7)

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2. OHISO, Y., AMANO, C., ITOH, Y., TAKENOUCHI, H., and KUROKAWA, T.: 'Long-wavelength vertical-cavity lasers with InGaAsP/InP-GaAs/ AlAs DBR's by wafer fusion', IEEE J. Quantum Electron., 1998, 56, pp. 1904-1913
3. QIAN, Y., ZHU, Z.H., LO, Y.H., HUFFAKER, D.L., DEPPE, D.G., HOU, H.Q., HAMMONS, B.E., LIN, W., and TU, Y.K.: 'Long wavelength (1.3μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region', Appl. Phys. Lett., 1997, 71, pp. 25-27
4. MARGALIT, N.M., BABIC, D.I., STREUBEL, K., MIRIN, R.P., NAONE, R.L., and BOWERES, J.E.: 'Submilliamp long wavelength vertical cavity lasers', Electron. Lett., 1996, 32, pp. 1675-1677
5. XIONG, Y., and LO, Y.H.: 'Current spreading and carrier diffusion in longwavelength vertical-cavity surface-emitting lasers', IEEE Photonics Technol. Lett., 1998, 9, pp. 1202-1204
6. TAKAGI, H., MAEDA, R., CHUNG, T.R., HOSODA, N., and SUGA, T.: 'Effect of surface roughness on room-temperature wafer bonding by Ar beam surface activation', Jpn. J. Appl. Phys., 1998, 37, pp. 4197-4203
7. OHISO, Y., IGA, R., KISHI, K., and AMANO, C.: Thin-film wafer fusion fabrication technology for buried heterostructure InGaAsP/InP lasers on GaAs', Electron. Lett., 1999, 35, pp. 1955-1957