MBE growth of high-power InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μm

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 825-832

  Turner, G W ^a   Manfra, M J ^a   Choi, H K ^a   Connors, M K ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CRYSTAL LATTICES; CURRENT DENSITY; HIGH POWER LASERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; THERMAL EFFECTS; WAVEGUIDES;

BROAD STRIPE LASERS; LATTICE MATCHING; RIDGE WAVEGUIDE LASERS;

QUANTUM WELL LASERS;

EID: 0031142754     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01030-5     Document Type: Article

References (11)

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