Correlation of W-Si-N film microstructure with barrier performance against Cu diffusion

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1589-1592

  Shimooka, Yoshiaki ^a   Iijima, Tadashi ^a   Nakamura, Shinichi ^a   Suguro, Kyoichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Barrier metal; Crystallization; Cu; Diffusion barrier; Diffusion mechanism; Microstructure; W microcrystal; WSiN

Indexed keywords

EID: 0004741579     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1589     Document Type: Article

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