Thin films of CoSi2 on Si1-yCy substrate layers

Microelectronic Engineering

Volumn 50, Issue 1-4, 2000, Pages 193-197

  Teichert, S ^a   Falke, M ^a   Giesler, H ^a   Sarkar, D K ^a   Beddies, G ^a   Hinneberg, H J ^a   Lippert, G ^b   Griesche, J ^b   Osten, H J ^b  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT COMPOUNDS; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; FILM GROWTH; SEMICONDUCTING FILMS; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

COBALT DISILICIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033640087     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00282-8     Document Type: Article

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