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Ellipsometry was performed on a Plasmos Ellipsometer (λ = 633 nm) assuming a refractive index of 1.46 for the monolayer and the underlying oxide. The thickness of the silicon oxide layer was measured separately on an unmodified part of the same wafer and subtracted from the total layer thickness determined for the monolayer covered silicon substrate
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Ellipsometry was performed on a Plasmos Ellipsometer (λ = 633 nm) assuming a refractive index of 1.46 for the monolayer and the underlying oxide. The thickness of the silicon oxide layer was measured separately on an unmodified part of the same wafer and subtracted from the total layer thickness determined for the monolayer covered silicon substrate.
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Experimental details of the contact angle measurements are described in S. Flink, B. A. Boukamp, A. van den Berg, F. C. J. M. van Veggel and D. N. Reinhoudt, J. Am. Chem. Soc., 1998, 120, 4652.
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Absorption measurements were performed on a Hewlett Packard 8452A Diode Array Spectrophotometer. The quartz slides were coated with a SAM on each side of the substrate, so that the presented absorption spectra are due to two monolayers. An unmodified quartz slide was used as a blank
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Absorption measurements were performed on a Hewlett Packard 8452A Diode Array Spectrophotometer. The quartz slides were coated with a SAM on each side of the substrate, so that the presented absorption spectra are due to two monolayers. An unmodified quartz slide was used as a blank.
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2 was determined by J. H. Moon, J. H. Kim, K. Kim, T.-H. Kang, B. Kim, C.-H. Kim, J. H. Hahn and J. W. Park, Langmuir, 1997, 13, 4305.
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Fluorescence emission and excitation spectra were measured with a SLM Instruments SPF-500C spectrofluorometer. The presented emission spectra were recorded after excitation at 350 nm with excitation and emission bandwidths of 7.5 nm
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Fluorescence emission and excitation spectra were measured with a SLM Instruments SPF-500C spectrofluorometer. The presented emission spectra were recorded after excitation at 350 nm with excitation and emission bandwidths of 7.5 nm.
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